A4G16QA8BVWESO

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Description: SO-DIMM DDR4 16GB SAMSUNG Fabricante: ATP Código de coincidencia (matchcode): A4G16QA8BVWESO Rutronik No.: DISMOD2334 Unidad de embalaje: 1 MOQ: 8 Presentación: TRAY

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Parámetros

Capacidad: 16GB
Temperatura máx: 85°C
Layout: SO-DIMM
Temperatura mín: 0°C
Frecuencia reloj: 3200 MHZ
ECC: NO
Tensión: 1,2
Pins: 260
Registered: NO
Automoción: NO
RoHS Status: RoHS-conform
Embalaje: TRAY

ECCN: EAR99
Número de tarifa aduanera: 84733020000
País: Taiwan
Clave-ABC: A
Plazo de entrega del proveedor: 6 Semanas

Descripción

Key features

Density: 2 GB to 128 GB
Increased performance and bandwidth (up to 3200 MT/s)
Decreased voltage for better power consumption
Provides better reliability, availability and serviceability (RAS) and improves data integrity

ATP's fourth-generation industrial DDR memory combines up to 3200 MT/s data transfer rate and a mere 1.2V power consumption to deliver faster performance at higher power savings over earlier DRAM technologies.

As the evolutionary transition from DDR3, DDR4 supports features and functions that are well-suited for increasing bandwidth capabilities to support the growth of online traffic.

DDR4-3200 MT/s is the newest generation of fast, performance-oriented DRAM modules optimized for the latest Intel® Xeon® Platinum, Gold, Silver and Bronze Scalable processors and 8th-generation Intel® Core™ i7/i5/i3 processors. The increased interface speed from 2400 MT/s to 3200 MT/s amplifies theoretical peak performance by 20% and gives a boost to the most critical computing applications in industries such as telecommunication infrastructures, networking storage systems, network-attached storage (NAS) servers, micro/cloud servers, and embedded systems like industrial PCs.