DGD2106MS8-13
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- Aplicación
- Driver
- Canales
- 2
- V(op,max)
- 600 V
- Montaje
- SMD
- Diagnóstico
- NO
- T(j,max)
- 150 °C
- t(on)
- 0.22 µS
- t(off)
- 0.2 µS
- Tecnología
- CMOS
- Automoción
- NO
- Encapsulado
- SO-14
- RoHS Status
- RoHS-conform
- Embalaje
- REEL
- ECCN
- EAR99
- Número de tarifa aduanera
- 85423990000
- País
- China
- Plazo de entrega del proveedor
- 18 Semanas
HIGH-SIDE AND LOW-SIDE GATE DRIVER IN SO-8
The DGD2106M is a high-voltage / high-speed gate driver capable of driving N-Channel MOSFETs and IGBTs in a half-bridge configuration. High voltage processing techniques enable the DGD2106M’s high-side to switch to 600V in a bootstrap operation.
The DGD2106M logic inputs are compatible with standard TTL and CMOS levels (down to 3.3V) to interface easily with controlling devices. The driver outputs feature high pulse current buffers designed for minimum driver cross conduction.
The DGD2106M is available in a space saving SO-8 (Type TH) package and operates over an extended -40°C to +125°C temperature range.
- DC-DC Converters
- DC-AC Inverters
- AC-DC Power Supplies
- Motor Controls
- Class D Power Amplifiers
- Floating High-Side Driver in Bootstrap Operation to 600V
- Drives two N-Channel MOSFETs or IGBTs in Half Bridge Configuation
- Outputs Tolerant to Negative Transients
- Wide Logic and Low-Side Gate Driver Supply Voltage: 10V To 20V
- Logic Input (HIN and LIN) 3.3V Capability
- Schmitt Triggered Logic Inputs with Internal Pull Down
- Undervoltage Lockout for High and Low Side Drivers
- Extended Temperature Range: -40°C To +125°C
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