AIKW50N65RF5XKSA1

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Description: IGBT 650V 50A+CoolSiC D.TO247-3 Fabricante: INFINEON Código de coincidencia (matchcode): AIKW50N65RF5 Rutronik No.: IGBT2951 Unidad de embalaje: 240 MOQ: 240 Encapsulado: TO-247 Presentación: TUBE

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Parámetros

V(CE): 650 V
I(C): 50 A
V(CEsat): 1.6 V
Encapsulado: TO-247
Bodydiode: YES
P(tot): 250 W
Automoción: AEC-Q(101)
t(r): 13 nS
td(off): 156 nS
td(on): 20 nS
Montaje: THT
RoHS Status: RoHS-conform
Tecnología: TRENCH
Embalaje: TUBE

Artículo fabricante: SP001724852
ECCN: EAR99
Número de tarifa aduanera: 85412900000
País: China
Clave-ABC: A
Plazo de entrega del proveedor: 41 Semanas

Descripción

Hybrid Power Discrete with SiC power technology in THD package for e-Mobility applications

Best cost-performance is the most important aspect for auxiliary applications in electric vehicles and hybrid vehicles. Therefore, Infineon has developed a hybrid of 650V TRENCHSTOP™ 5 AUTO fast-switching IGBT and CoolSiC™ Schottky Diode to enable a cost-efficient performance boost for fast switching automotive applications such as On-Board Charger, PFC, DC-DC and DC-AC.
The combination of a best-in-class fast-switching IGBT with a very reliable SiC Diode builds a perfect cost-performance trade-off for hard-switching topologies. Due to the Qrr-free unipolar CoolSiC™ Schottky Diode, the Eon of the IGBT will be reduced significantly over silicon-only solutions. This makes the hybrid the first-choice for system-cost-sensitive hard commutation applications, such as Totem Pole topology in Automotive On-Board Charger applications. This results in better margin for low-complexity design-in activities.

Summary of Features