BFP840ESDH6327XTSA1

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Description: NPN RF-Trans.1.8V 35mA SOT343 Fabricante: INFINEON Código de coincidencia (matchcode): BFP 840ESD H6327 Rutronik No.: THF5337 Unidad de embalaje: 3000 MOQ: 3000 Encapsulado: SOT343 Presentación: REEL

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Parámetros

Polaridad: NPN
U(cc) max: 2.25 V
Frec. F: 5500 MHz
P(out): 0.075 W
Encapsulado: SOT343
Automoción: NO
RoHS Status: RoHS-conform
Embalaje: REEL

Artículo fabricante: SP000943010
ECCN: EAR99
Número de tarifa aduanera: 85412100000
País: China
Plazo de entrega del proveedor: 10 Semanas

Descripción

The BFP840ESD is a discrete hetero-junction bipolar transistor (HBT) specifically designed for high performance 5 GHz band.

Summary of Features:

Unique combination of high end RF performance and robustness: 20 dBm maximum RF input power, 1.5kV HBM ESD hardness
High transition frequency fT = 80 GHz to enable low noise figure at high frequencies: e.g. Nfmin = 0.85 dB at 5.5 GHz, 1.8 V, 6 mA
High gain Gms = 22.5 dB at 5.5 GHz, 1.8 V, 10 mA
OIP3 = 22 dBm at 5.5 GHz, 1.8 V, 10 mA
Suitable for low voltage applications e.g. VCC = 1.2 V and 1.8 V (2.85 V, 3.3 V, 3.6 V require a corresponding collector resistor)

Target Applications:

Mobile and fixed connectivity applications: WLAN 802.11, WiMAX and UWB
Satellite communication systems: satellite radio (SDARs, DAB), navigation systems (e.g. GPS, Glonass, Beidou, Galileo)