BFP842ESDH6327XTSA1

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Description: NPN RF-Trans 3,25V 40mA SOT343 Fabricante: INFINEON Código de coincidencia (matchcode): BFP842ESD H6327 Rutronik No.: THF5312 Unidad de embalaje: 3000 MOQ: 3000 Encapsulado: SOT343 Presentación: REEL

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Parámetros

Polaridad: NPN
U(cc) max: 2.85 V
Frec. F: 3500 MHz
P(out): 0.120 W
Encapsulado: SOT343
Automoción: NO
RoHS Status: RoHS-conform
Embalaje: REEL

Artículo fabricante: SP000943012
ECCN: EAR99
Número de tarifa aduanera: 85412100000
País: China
Clave-ABC: B
Plazo de entrega del proveedor: 10 Semanas

Descripción

The BFP842ESD is a high performance RF heterojunction bipolar transistor (HBT) with an integrated ESD protection suitable for 2.3 - 3.5 GHz LNA applications.

Summary of Features:

Unique combination of high end RF performance and robustness: 16 dBm maximum RF input power, 1.5kV HBM ESD hardness
High transition frequency fT = 57 GHz enables best in class noise performance at high frequencies: NFmin = 0.65 dB at 3.5 GHz, 2.5 V, 5 mA
High gain Gma = 17.5 dB at 3.5 GHz, 2.5 V, 15 mA
OIP3 = 25.5 dBm at 3.5 GHz, 2.5 V, 15 mA
Suitable for low voltage applications e.g. VCC = 1.2 V and 1.8 V (2.85 V, 3.3 V, 3.6 V require corresponding collector resistor

Target Applications:

Wireless communications: WLAN, WiMAX and Bluetooth
Satellite communication systems: GNSS Navigation systems (GPS, GLONASS, COMPASS/Beidu/Galileo), Satellite radio (SDARs, DAB and C-band LNB) and C-band LNB (1st and 2nd stage LNA)
Multimedia applications such as mobile/portable TV, Mobile TV, FM Radio
3G/4G UMTS/LTE mobile phone applications
ISM applications like RKE, AMR and Zigbee