IGW15N120H3FKSA1

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Description: IGBT 1200V 30A 2.05V TO247-3 Fabricante: INFINEON Código de coincidencia (matchcode): IGW15N120H3 Rutronik No.: IGBT1161 Unidad de embalaje: 30 MOQ: 240 Encapsulado: TO247-3 Presentación: TUBE

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Parámetros

V(CE): 1200 V
I(C): 30 A
V(CEsat): 2.40 V
Encapsulado: TO247-3
Bodydiode: NO
P(tot): 217 W
Automoción: NO
t(r): 34 nS
td(off): 260 nS
td(on): 21 nS
Montaje: THT
RoHS Status: RoHS-conform
Tecnología: HighSpeed
Embalaje: TUBE

Artículo fabricante: SP000674430
ECCN: EAR99
Número de tarifa aduanera: 85412900000
País: China
Clave-ABC: A
Plazo de entrega del proveedor: 21 Semanas

Descripción

Infineon’s high speed devices are used to reduce the size of the active components (25kHz --> 70kHz). Infineon’s HighSpeed 3 family provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses. Furthermore, up to 15% efficiency improvement can be achieved by implementing this technology in your design.

Summary of Features

Designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz
Low switching losses for high efficiency
Excellent V ce(sat) behavior thanks to the famous Infineon TRENCHSTOP™ technology
Fast switching behavior with low EMI emissions
Optimized diode for target applications, meaning further improvement in switching losses
Low gate resistor selection possible (down to 5Ω) whilst maintaining excellent switching behaviour
Short circuit capability
Offering T j(max) of 175°C
Packaged with and without freewheeling diode for increased design freedom