IHW50N65R6XKSA1

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Description: IGBT 650V 50A 1.3V TO247-3 Fabricante: INFINEON Código de coincidencia (matchcode): IHW50N65R6 Rutronik No.: IGBT2976 Unidad de embalaje: 30 MOQ: 240 Encapsulado: TO247-3 Presentación: TUBE

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Parámetros

V(CE): 650 V
I(C): 100 A
V(CEsat): 1.3 V
Encapsulado: TO247-3
Bodydiode: YES
P(tot): 251 W
Automoción: NO
t(r): 25 nS
td(off): 261 nS
td(on): 21 nS
Montaje: THT
RoHS Status: RoHS-conform
Tecnología: RC-Soft-Sw
Embalaje: TUBE

Artículo fabricante: SP005399490
ECCN: EAR99
Número de tarifa aduanera: 85412900000
País: China
Clave-ABC: B
Plazo de entrega del proveedor: 21 Semanas

Descripción

650 V, 50 A IGBT with monolithically integrated diode in TO-247 package

Reverse Conducting R6 650 V, 50 A IGBT in TO-247 package with monolithically integrated diode is designed to fulfill demanding requirements of induction heating applications using half-bridge resonant topology.

Thanks to best system performances and high compatibility with existing gate driver solution, 650 V R6 IGBT represents the optimal choice for soft switching topologies.

Summary of Features

Very low VCEsat and low Eoff
High ruggedness and stable temperature behavior
Easy parallel switching capability due to positive temperature coefficient in VCEsat
Frequency range 20-75 kHz
Low EMI
Very tight parameter distribution
Maximum operating TJ of 175 °C

Benefits