IKB20N60H3ATMA1

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Description: IGBT 600V 40A 1,95V TO263-3 Fabricante: INFINEON Código de coincidencia (matchcode): IKB20N60H3 Rutronik No.: IGBT1288 Unidad de embalaje: 1000 MOQ: 1000 Encapsulado: TO263 Presentación: REEL

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Parámetros

V(CE): 600 V
I(C): 40 A
V(CEsat): 1,95 V
Encapsulado: TO263
Bodydiode: YES
P(tot): 170 W
Automoción: NO
t(r): 20 nS
td(off): 194 nS
td(on): 16 nS
Montaje: SMD
RoHS Status: RoHS-conform
Tecnología: TRENCHSTOP
Embalaje: REEL

Artículo fabricante: SP000852234
ECCN: EAR99
Número de tarifa aduanera: 85412900000
País: Malaysia
Clave-ABC: B
Plazo de entrega del proveedor: 21 Semanas

Descripción

Infineon’s high speed devices are used to reduce the size of the active components (25kHz --> 70kHz). Infineon’s HighSpeed 3 family provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses. Summary of Features

Designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz
Low switching losses for high efficiency
Excellent V ce(sat) behavior thanks to the famous Infineon TRENCHSTOP™ technology
Fast switching behavior with low EMI emissions
Optimized diode for target applications, meaning further improvement in switching losses
Low gate resistor selection possible (down to 5Ω) whilst maintaining excellent switching behaviour
Short circuit capability
Offering T j(max) of 175°C
Packaged with and without freewheeling diode for increased design freedom

Benefits