IKW20N60TFKSA1

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Description: IGBT 650V 20A 1,5V TO247-3 Fabricante: INFINEON Código de coincidencia (matchcode): IKW20N60T Rutronik No.: IGBT2252 Unidad de embalaje: 30 MOQ: 30 Encapsulado: TO-247 Presentación: TUBE

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Parámetros

V(CE): 600 V
I(C): 20 A
V(CEsat): 1,5 V
Encapsulado: TO-247
Bodydiode: YES
P(tot): 166 W
Automoción: NO
t(r): 14 nS
td(off): 199 nS
td(on): 18 nS
Montaje: THT
RoHS Status: RoHS-conform
Tecnología: Trench
Embalaje: TUBE

Artículo fabricante: SP000054886
ECCN: EAR99
Número de tarifa aduanera: 85412900000
País: China
Clave-ABC: A
Plazo de entrega del proveedor: 21 Semanas

Descripción

Infineon's TRENCHSTOP™ IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.

Summary of Features

Lowest V ce(sat) drop for lower conduction losses
Low switching losses
Easy parallel switching capability due to positive temperature coefficient in V ce(sat)
Very soft, fast recovery anti-parallel Emitter Controlled Diode
High ruggedness, temperature stable behavior
Low EMI emissions
Low gate charge
Very tight parameter distribution