IKW25T120FKSA1

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Description: IGBT 1200V 50A 2.2V TO247-3 Fabricante: INFINEON Código de coincidencia (matchcode): IKW25T120 Rutronik No.: TMOSP6351 Unidad de embalaje: 30 MOQ: 240 Encapsulado: TO247-3 Presentación: TUBE

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Parámetros

V(CE): 1200 V
I(C): 50 A
V(CEsat): 2.2 V
Encapsulado: TO247-3
Bodydiode: YES
P(tot): 190 W
Automoción: NO
t(r): 30 nS
td(off): 560 nS
td(on): 50 nS
Montaje: THT
RoHS Status: RoHS-conform
Tecnología: TrenchStop
Embalaje: TUBE

Artículo fabricante: SP000013939
ECCN: EAR99
Número de tarifa aduanera: 85412900000
País: China
Clave-ABC: A
Plazo de entrega del proveedor: 21 Semanas

Descripción

Infineon's TRENCHSTOP™ IGBT technology leads to significant improvement of static as well as dynamic performance of the device, due to combination of trenchstop-cell and fieldstop concept. The combination of IGBT with soft recovery Emitter Controled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.

Summary of Features

Lowest V ce(sat) drop for lower conduction losses
Low switching losses
Easy parallel switching capability due to positive temperature coefficient in V ce(sat)
Very soft, fast recovery anti-parallel Emitter Controlled HE diode
High ruggedness, temperature stable behavior
Low EMI emissions
Low gate charge
Very tight parameter distribution