IKZA40N120CH7XKSA1

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Description: IGBT 1200V 40A 2,5V TO247-3 Fabricante: INFINEON Código de coincidencia (matchcode): IKZA40N120CH7 Rutronik No.: IGBT3207 Unidad de embalaje: 30 MOQ: 240 Encapsulado: TO247-3 Presentación: TUBE

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Parámetros

V(CE): 1200 V
I(C): 40 A
V(CEsat): 1.7 V
Encapsulado: TO247-3
Bodydiode: NO
P(tot): 330 W
Automoción: NO
t(r): 13 nS
td(off): 360 nS
td(on): 34 nS
Montaje: SMD
RoHS Status: RoHS-conform
Tecnología: TRENCHSTOP
Embalaje: TUBE

Artículo fabricante: SP005578267
ECCN: EAR99
Número de tarifa aduanera: 85412900000
País: China
Plazo de entrega del proveedor: 21 Semanas

Descripción

1200 V, 40 A IGBT with anti-parallel diode in TO-247 4pin package

Hard-switching 1200 V, 40 A TRENCHSTOP™ IGBT7 H7 discrete in TO-247 4pin package technology has been developed to fulfill the demand in applications focusing on decarbonization such as solar photovoltaic, uninterruptible power supplies and battery chargers.

Summary of Features

Excellent VCEsat behavior thanks to the famous Infineon TRENCHSTOP™ technology
Fast switching behavior with low EMI emissions
Optimized diode for target applications, resulting in low Qrr
Low gate resistor selection possible (down to 5 Ω) whilst maintaining excellent switching behavior
Offering Tj(max) of 175 °C

Benefits

Technology with the highest power density with up to 140 A rating
Optimized performance in application conditions
Lowest conduction losses
Lowest switching losses
Humidity robustness under harsh environment
Improved EMI performance
Kelvin emitter pin brings additional reduction of total switching losses compare to 3 pin

Applications