IPN80R1K2P7ATMA1

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Description: N-CH 800V 4,5A 1000mOhm SOT223 Fabricante: INFINEON Código de coincidencia (matchcode): IPN80R1K2P7 Rutronik No.: TMOS2567 Unidad de embalaje: 3000 MOQ: 3000 Encapsulado: SOT-223 Presentación: REEL

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Parámetros

Configuration: N-CH
V(DS): 800 V
I(D)at Tc=25°C: 4.5 A
RDS(on)at 10V: 1000 mOhm
Q(g): 11 nC
P(tot): 6.8 W
Logic level: NO
Mounting: SMD
Technology: CoolMOS P7
Fast bodydiode: NO
Automoción: NO
Encapsulado: SOT-223
RoHS Status: RoHS-conform
Embalaje: REEL

Artículo fabricante: SP001664998
ECCN: EAR99
Número de tarifa aduanera: 85412900000
País: China
Clave-ABC: B
Plazo de entrega del proveedor: 19 Semanas

Descripción

Description:

Summary of Features

Best-in-class FOM R DS(on) * E oss; reduced Qg, C iss and C oss
Best-in-class DPAK R DS(on) of 280mΩ
Best-in-class V (GS)th of 3V and smallest V (GS)th variation of ± 0.5V
Integrated Zener diode ESD protection up to Class 2 (HBM)
Best-in-class quality and reliability
Fully optimized portfolio

Benefits

0.1% to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature as compared to CoolMOS™ C3
Enabling higher power density designs, BOM savings and lower assembly cost
Easy to drive and to design-in
Better production yield by reducing ESD related failures
Less production issues and reduced field returns
Easy to select right parts for fine tuning of designs