IPP80R600P7XKSA1

La imagen puede diferir del original

Description: N-CH 800V 8A 510mOhm TO-220 Fabricante: INFINEON Código de coincidencia (matchcode): IPP80R600P7 Rutronik No.: TMOS1779 Unidad de embalaje: 50 MOQ: 500 Encapsulado: TO-220 Presentación: TUBE

Buscar alternativas

Hoja de datos Insertar en lista de proyectos Muestras

Download the free Library Loader to convert this file for your ECAD Tool

Parámetros

Configuration: N-CH
V(DS): 800 V
I(D)at Tc=25°C: 8 A
RDS(on)at 10V: 510 mOhm
Q(g): 20 nC
P(tot): 60 W
R(thJC): 2.1 K/W
Logic level: NO
Mounting: THT
Technology: CoolMOS P7
Fast bodydiode: NO
Automoción: NO
Encapsulado: TO-220
RoHS Status: RoHS-conform
Embalaje: TUBE

Artículo fabricante: SP001644610
ECCN: EAR99
Número de tarifa aduanera: 85412900000
País: China
Plazo de entrega del proveedor: 19 Semanas

Descripción

Description:

Summary of Features

Best-in-class FOM R DS(on) * E oss; reduced Qg, C iss and C oss
Best-in-class DPAK R DS(on) of 280mΩ
Best-in-class V (GS)th of 3V and smallest V (GS)th variation of ± 0.5V
Integrated Zener diode ESD protection up to Class 2 (HBM)
Best-in-class quality and reliability
Fully optimized portfolio

Benefits

0.1% to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature as compared to CoolMOS™ C3
Enabling higher power density designs, BOM savings and lower assembly cost
Easy to drive and to design-in
Better production yield by reducing ESD related failures
Less production issues and reduced field returns
Easy to select right parts for fine tuning of designs