IPS70R600P7SAKMA1

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Description: N-CH 700V 8,5A 490mOhm TO-251 Fabricante: INFINEON Código de coincidencia (matchcode): IPS70R600P7S Rutronik No.: TMOS3210 Unidad de embalaje: 75 MOQ: 1500 Encapsulado: TO-251 Presentación: TUBE

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Parámetros

Configuration: N-CH
V(DS): 700 V
I(D)at Tc=25°C: 8.5 A
RDS(on)at 10V: 490 mOhm
Q(g): 10.5 nC
P(tot): 43.1 W
R(thJC): 2.9 K/W
Logic level: NO
Mounting: SMD
Technology: CoolMOS P7
Fast bodydiode: YES
Automoción: NO
Encapsulado: TO-251
RoHS Status: RoHS-conform
Embalaje: TUBE

Artículo fabricante: SP001499714
ECCN: EAR99
Número de tarifa aduanera: 85412900000
País: China
Clave-ABC: B
Plazo de entrega del proveedor: 19 Semanas

Descripción

Developed to serve today’s and especially tomorrow’s trends in flyback topologies – the new 700V CoolMOS™ P7 series addresses the low power SMPS market, such as mobile phone chargers or notebook adapters by offering fundamental performance gains compared to superjunction technologies used today. By combining customers’ feedback with over 20 years of superjunction MOSFET experience, 700V CoolMOS™ P7 enables best fit for target applications in terms of:

Summary of Features

Extremely low FOM R DS(on) x E oss; lower Q g, E on and E off
Highly performant technology Low switching losses (E oss) Highly efficient Excellent thermal behavior
Allowing high speed switching
Integrated protection Zener diode
Optimized V (GS)th of 3V with very narrow tolerance of ±0.5V
Finely graduated portfolio

Benefits

Cost competitive technology
Up to 2.4% efficiency gain and 12K lower device temperature compared to C6 technology
Further efficiency gain at higher switching speed
Supporting less magnetic size with lower BOM costs
High ESD ruggedness up to HBM Class 2 level
Easy to drive and design-in
Enabler for smaller form factors and high power density designs
Excellent choice in selecting the best fitting product