ISC007N06NM6ATMA1

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Description: N-CH 40V 381A 0,7mOhm TDSON-8FL Fabricante: INFINEON Código de coincidencia (matchcode): ISC007N06NM6 Rutronik No.: LVMOS1203 Unidad de embalaje: 5000 MOQ: 5000 Encapsulado: TDSON-8 Presentación: REEL

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Parámetros

Configuration: N-CH
V(DS): 40 V
I(D)at Tc=25°C: 381 A
RDS(on)at 10V: 0.7 mOhm
Q(g): 94 nC
P(tot): 188 W
R(thJC): 0.8 K/W
Logic level: NO
Mounting: SMD
Technology: OptiMOS 6
Fast bodydiode: YES
Automoción: NO
Encapsulado: TDSON-8
RoHS Status: RoHS-conform
Embalaje: REEL

Artículo fabricante: SP005570350
ECCN: EAR99
Número de tarifa aduanera: 85412900000
País: Malaysia
Clave-ABC: C
Plazo de entrega del proveedor: 14 Semanas

Descripción

OptiMOS™ 6 power MOSFET 40 V normal level with latest Infineon technology in a SuperSO8 package

With this best-in-class OptiMOSTM 6 power MOSFET 40V normal level, Infineon offers a benchmark solution for normal level (higher threshold voltage) required applications such as battery-powered applications, battery-powered tools, battery management, and low voltage drives. A higher Vth for the normal level portfolio means that only larger gate voltage spikes would cause an unwanted turn-on.

In addition, lower QGD/QGS ratios (CGD/CGS divider ratio) reduce the gate voltage spikes' peak, further contributing to the robustness against unwanted turn-on. The ISC007N04NM6 features very low RDS(on) of 0.7mOhm.

Summary of Features

N-channel enhancement mode
Normal level gate threshold (2.3 V typical)
MSL1 up to 260°C peak reflow
175°C junction temperature (Tj)
Optimized charge ratio QGD/QGS <0.8 for C.dv/dt immunity
Low gate charge
100% avalanche tested
Superior thermal resistance

Benefits

Normal gate drive offers immunity to false turn-on in noisy environments
Reduced switching losses due to low gate charge
Suitable for FOC (field-oriented control) and DTC (direct torque control) motor control techniques

Potential Applications