2ED2388S06FXUMA1
La imagen puede diferir del original
Hoja de datos
Insertar en lista de proyectos
Muestras
Download the free Library Loader to convert this file for your ECAD Tool
- Canales
- 2
- V(op,min)
- 10 V
- V(op,max)
- 20 V
- I(lim,min)/Ch
- 0.29 A
- T(j,min)
- -40 °C
- T(j,max)
- 105 °C
- V(in,min)
- -1 V
- V(in,max)
- 25 V
- t(on)
- 0.09 µS
- t(off)
- 0.09 µS
- Automoción
- NO
- Encapsulado
- DSO-8
- RoHS Status
- RoHS-conform
- Embalaje
- REEL
- Artículo fabricante
- SP005571188
- ECCN
- EAR99
- Número de tarifa aduanera
- 85423990000
- País
- Thailand
- Plazo de entrega del proveedor
- 41 Semanas
650 V high speed, half-bridge gate driver with typical 0.29 A source and 0.7 A sink currents in DSO-8 package for driving power MOSFETs and IGBTs
Based on our SOI-technology, the 2ED2388S06F has excellent ruggedness and noise immunity against negative transient voltages on VS pin. With no parasitic thyristor structures present in the device, no parasitic latch up can occur over all temperature and voltage conditions.
Summary of Features
- Operating voltages (VS node) up to + 650 V
- Negative VS transient immunity of 100 V
- Integrated ultra-fast, low resistance bootstrap diode
- 90 ns propagation delay
- HIN, LIN logic input
- Floating channel designed for bootstrap operation
- Independent under voltage lockout (UVLO) for both channels
- Logic operational up to –11 V on VS Pin
- Negative voltage tolerance on inputs of –5 V
- Maximum supply voltage of 25 V
- 3.3 V, 5 V and 15 V input logic compatible
Benefits
- Integrated bootstrap diode - space savings, reduced BOM cost, smaller PCB at lower cost with simpler design
- 50% lower level-shift losses
- Excellent ruggedness and noise immunity against negative transient voltages on VS pin
Puede pedir definitivamente los artículos de la cesta de compra o en caso que tenga alguna duda, enviar como consulta sin compromiso.
Rutronik24 es un portal de comercio electrónico solo para empresas y clientes corporativos