2ED3140MC12LXUMA1
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- Canales
- 2
- T(j,min)
- -40 °C
- T(j,max)
- 150 °C
- V(in,min)
- -0,3 V
- V(in,max)
- 17 V
- t(on)
- 0.039 µS
- t(off)
- 0.039 µS
- Automoción
- NO
- Encapsulado
- PG-DSO-14
- RoHS Status
- RoHS-conform
- Embalaje
- REEL
- Artículo fabricante
- SP005909927
- ECCN
- EAR99
- Número de tarifa aduanera
- 85423990000
- País
- Indonesia
- Plazo de entrega del proveedor
- 18 Semanas
EiceDRIVER™ Compact dual-channel isolated gate driver with 6.5 A sinking and 6 A sourcing peak output current in a 14-pin DSO wide body package for IGBTs, MOSFETs and SiC MOSFETs.
2ED3140MC12L belongs to the EiceDRIVER™ Compact 2ED31xx family (X3
compact family). 2ED3140 offers dead-time control (DTC) functionality
and independent channel operation. This allows for operation
as a dual-channel low-side driver, a dual-channel high-side driver or a half-bridge gate driver with a configurable dead-time.
Summary of Features
- For use with 600 V/650 V/1200 V/1700 V/2300 V IGBTs, Si and SiC MOSFETs
- 2300 V functional offset voltage capable for selected applications
- Galvanically isolated coreless transformer gate driver
- Up to 6.5 A typical peak output current
- 39 ns propagation delay
- 35 V absolute maximum output supply voltage
- High common-mode transient immunity CMTI > 200 kV/µs
- Active shutdown and short circuit clamping
Benefits
- 8 mm input-to-output and 3.3 mm channel-to-channel creepage and clearance
- Tight part-to-part propogation delay skew of 8 ns max
- Tight channel-to-channel propogation delay skew of 5ns max
- Dual-channel configuation reduces footprint
- Dead time control
- UL 1577 VISO = 6.84 kV (rms) for 1 s, VISO = 5.7 kV (rms) for 1 min
- IEC 60747-17 (planned) with VIORM = 1767 V (peak, reinforced)
- 3.3 V and 5 V input supply voltage
- Disable pin switches outputs off
- 8.5 V/ 9.3 V undervoltage lockout (UVLO) protection with hysteresis
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