AIKB50N65DF5ATMA1

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Description: IGBT 650V 50A AECQ D2PAK SMD Fabricante: INFINEON Código de coincidencia (matchcode): AIKB50N65DF5 Rutronik No.: IGBT2869 Unidad de embalaje: 1000 MOQ: 1000 Encapsulado: TO263-3 Presentación: REEL

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Parámetros

V(CE): 650 V
I(C): 80 A
V(CEsat): 1.6 V
Encapsulado: TO263-3
Bodydiode: YES
P(tot): 305 W
Automoción: AEC-Q(101)
t(r): 16 nS
td(off): 166 nS
td(on): 23 nS
Montaje: SMD
RoHS Status: RoHS-conform
Tecnología: TRENCHST.5
Embalaje: REEL

Artículo fabricante: SP001686004
ECCN: EAR99
Número de tarifa aduanera: 85412900000
País: Malaysia
Clave-ABC: A
Plazo de entrega del proveedor: 28 Semanas

Descripción

World-class low-cost power for fast-switching applications in small SMD packages

Energy efficiency is the most important aspect for electric vehicles and hybrid vehicles. Therefore, Infineon has developed the 650 V TRENCHSTOP™ 5 AUTO technology with H5/F5 optimization to enable highest efficiency fast switching automotive applications such as On-Board Charger, PFC, DC/DC and DC/AC.

TRENCHSTOP™ 5 AUTO is an IGBT technology that enables world’s lowest losses for switching and conduction in its category. The resulting high efficiency enables either an increased cruising range or a downsizing of the batteries for electric vehicles. For hybrid vehicles, it helps to reduce overall fuel consumption. The great performance of TRENCHSTOP™ 5 AUTO offers a cost-optimized solution where engineers were used to use MOSFETs only.

Moreover, TRENCHSTOP™ 5 AUTO technology in an SMD housing, like the D²PAK (PG-TO263-3), even further decreases IGBT solution costs by reducing cost on system and manufacturing level. This comes with the benefit of increased quality control due to automated processes

Summary of Features

TRENCHSTOP™ 5 technology with low VCEsat, optimized as F5 variant (Highest Efficiency Variant) for highest possible switching speed
650V break-down voltage, 50A nominal current
Co-packed with RAPID-1 fast and soft anti-parallel diode
Very fast switching (up to 150kHz)
Automotive qualified in accordance to Infineon quality standards
Max junction temperature 175 °C
Highest efficiency
- very low conduction losses
- very low switching losses
Very low junction and case temperature
SMD D2PAK package for low assembly costs and higher power density
Extremely robust