BFP740ESDH6327XTSA1

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Description: NPN RF-Trans. 4.2V 45mA SOT343 Fabricante: INFINEON Código de coincidencia (matchcode): BFP 740ESD H6327 Rutronik No.: THF5334 Unidad de embalaje: 3000 MOQ: 3000 Encapsulado: SOT343 Presentación: REEL

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Parámetros

Polaridad: NPN
U(cc) max: 4.2 V
Frec. F: 5500 MHz
P(out): 0.16 W
Encapsulado: SOT343
Automoción: NO
RoHS Status: RoHS-conform
Embalaje: REEL

Artículo fabricante: SP000785486
ECCN: EAR99
Número de tarifa aduanera: 85412100000
País: China
Plazo de entrega del proveedor: 10 Semanas

Descripción

The BFP740ESD is a Silicon Germanium Carbon (SiGe:C) NPN Heterojunction wideband Bipolar RF Transistor (HBT).

Summary of Features:

Unique combination of high end RF performance and robustness: 21 dBm maximum RF input power, 2 kV ESD robustness (HBM) due to integrated protection circuits
NFmin = 0.65 dB at 2.4 GHz and 0.9 dB at 5.5 GHz, 3V, 6 mA
High gain Gms = 25.5 dB at 2.4 GHz and Gma = 18.5 dB at 5.5 GHz, 3V, 25 mA
OIP3 = 24 dBm at 5.5 GHz, 3V, 25 mA

Target Applications:

Wireless communications: WLAN, WiMax and UWB
Satellite communication systems: Navigation systems (GPS, Glonass), satellite radio (SDARs, DAB) and C-band LNB
Multimedia applications such as portable TV, CATV, FM Radio
ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications