IGP15N60TXKSA1
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- V(CE)
- 600 V
- I(C)
- 30 A
- V(CEsat)
- 1.5 V
- Encapsulado
- TO220-3
- Bodydiode
- NO
- P(tot)
- 130 W
- Automoción
- NO
- t(r)
- 11 nS
- td(off)
- 188 nS
- td(on)
- 17 nS
- Montaje
- THT
- RoHS Status
- RoHS-conform
- Tecnología
- 2-20kHz
- Embalaje
- TUBE
- Artículo fabricante
- SP000683044
- ECCN
- EAR99
- Número de tarifa aduanera
- 85412900000
- País
- Malaysia
- Clave-ABC
- B
- Plazo de entrega del proveedor
- 21 Semanas
600 V, 15 A IGBT Discrete in TO220 package
Hard-switching 600 V, 15 A single TRENCHSTOP™ IGBT3 in a TO220 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.
Summary of Features
- Lowest VCEsat drop for lower conduction losses
- Low switching losses
- Easy parallel switching capability due to positive temperature coefficient in VCEsat
- Very soft, fast recovery anti-parallel Emitter Controlled Diode
- High ruggedness, temperature stable behavior
- Low EMI emissions
- Low gate charge
- Very tight parameter distribution
Benefits
- Highest efficiency – low conduction and switching losses
- Comprehensive portfolio in 600 V and 1200 V for flexibility of design
- High device reliability
Applications
- Major home appliances
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