IGW25N120H3FKSA1

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Description: IGBT 1200V 50A 2.05V TO247-3 Fabricante: INFINEON Código de coincidencia (matchcode): IGW25N120H3 Rutronik No.: IGBT1162 Unidad de embalaje: 30 MOQ: 30 Encapsulado: TO247-3 Presentación: TUBE

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Parámetros

V(CE): 1200 V
I(C): 50 A
V(CEsat): 2.40 V
Encapsulado: TO247-3
Bodydiode: NO
P(tot): 326 W
Automoción: NO
t(r): 41 nS
td(off): 277 nS
td(on): 27 nS
Montaje: THT
RoHS Status: RoHS-conform
Tecnología: HighSpeed
Embalaje: TUBE

Artículo fabricante: SP000674424
ECCN: EAR99
Número de tarifa aduanera: 85412900000
País: China
Clave-ABC: A
Plazo de entrega del proveedor: 21 Semanas

Descripción

Description:

High speed 1200 V, 25 A single TRENCHSTOP™ IGBT3 in a TO247 package provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses.

Summary of Features:

Designed specifically to replace planar MOSFETs in applications switching at frequencies below 70 kHz
Low switching losses for high efficiency
Excellent VCEsat behavior thanks to the famous Infineon TRENCHSTOP™ technology
Fast switching behavior with low EMI emissions
Optimized diode for target applications, meaning further improvement in switching losses
Low gate resistor selection possible (down to 5Ω) whilst maintaining excellent switching behaviour
Short circuit capability
Offering Tj(max) of 175°C
Packaged with and without freewheeling diode for increased design freedom

Benefits:

Low switching and conduction losses
Very good EMI behavior
Can be used with a small gate resistor for reduced delay time and voltage overshoot
High current density
Best-in-class 1200 V IGBT efficiency and EMI behavior

Target Applications:

- Industrial heating and welding

- solar

- power supply