IKW75N65ES5
La imagen puede diferir del original
Fabricante: INFINEON
Código de coincidencia (matchcode): IKW75N65ES5
Rutronik No.: IGBT1981
Unidad de embalaje: 1
MOQ: 1
Encapsulado: TO247-3
Presentación: TUBE
Los más vendidos
IGBT 650V 75A 1.42V TO247-3 Descripción
The 650 V, 75 A hard-switching TRENCHSTOP™ 5 S5 IGBT in a TO247 package addresses applications switching between 10 kHz and 40 kHz to deliver high efficiency, faster time-to-market cycles, circuit design complexity reduction and PCB bill of material cost optimization.
Summary of Features
- Very low VCEsat of 1.35 V at 25°C, 20% lower than TRENCHSTOP™ 5 H5
- 4 times Ic pulse current (100°C Tc)
- Soft current fall characteristics with no tail current
- Symmetrical, low voltage overshoot
- Gate voltage under control (no oscillation). No risk of unwanted turn-on of device and no need for gate clamping
- Maximum junction temperature Tvj = 175°C
- Qualified according to JEDEC standards
Benefits
- VCEpeak clamping circuits not required
- No need for gate clamping components
- Good EMI behaviour
- Excellent for paralleling
Parámetros
- V(CE)
- 650 V
- I(C)
- 75 A
- V(CEsat)
- 1.42 V
- Encapsulado
- TO247-3
- Bodydiode
- YES
- P(tot)
- 395 W
- Automoción
- NO
- t(r)
- 46 nS
- td(off)
- 144 nS
- td(on)
- 40 nS
- Montaje
- THT
- RoHS Status
- RoHS-conform
- Tecnología
- HighSpeed
- Embalaje
- TUBE
- Artículo fabricante
- SP001319684
- ECCN
- EAR99
- Número de tarifa aduanera
- 85412900000
- País
- China
- Clave-ABC
- A
- Plazo de entrega del proveedor
- 21 Semanas
