IPA60R180P7XKSA1

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Description: N-CH 600V 18A 180mOhm TO220FP Fabricante: INFINEON Código de coincidencia (matchcode): IPA60R180P7 Rutronik No.: TMOS1776 Unidad de embalaje: 50 MOQ: 500 Encapsulado: TO-220FP Presentación: TUBE

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Parámetros

Configuration: N-CH
V(DS): 600 V
I(D)at Tc=25°C: 18 A
RDS(on)at 10V: 180 mOhm
Q(g): 25 nC
P(tot): 26 W
R(thJC): 4.85 K/W
Logic level: NO
Mounting: THT
Technology: CoolMOS P7
Fast bodydiode: NO
Automoción: NO
Encapsulado: TO-220FP
RoHS Status: RoHS-conform
Embalaje: TUBE

Artículo fabricante: SP001606042
ECCN: EAR99
Número de tarifa aduanera: 85412900000
País: China
Clave-ABC: B
Plazo de entrega del proveedor: 19 Semanas

Descripción

The 600V CoolMOS™ P7 superjunction MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency.

Summary of Features:

Efficiency

600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G

Ease-of-use

Integrated ESD diode from 180mN and above R DS(on)s
Integrated gate resistor R G
Rugged body diode
Wide portfolio in through hole and surface mount packages
Both standard grade and industrial grade parts are available

Benefits:

Efficiency

Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency

Ease-of-use

Ease-of-use in manufacturing environments by stopping ESD failures occurring
Integrated RG reduces MOSFET oscillation sensitivity
MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC
Excellent ruggedness during hard commutation of the body diode seen in LLC topology
Suitable for a wide variety of end applications and output powers
Parts available suitable for consumer and industrial applications

Target Applications: