IPD60R600E6ATMA1

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Description: N-CH 600V 7,3A 600mOhm TO252-3 Fabricante: INFINEON Código de coincidencia (matchcode): IPD60R600E6 Rutronik No.: TMOSP10330 Unidad de embalaje: 2500 MOQ: 2500 Encapsulado: DPAK Presentación: REEL

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Parámetros

Configuration: N-CH
V(DS): 600 V
I(D)at Tc=25°C: 7.3 A
RDS(on)at 10V: 600 mOhm
Q(g): 20.5 nC
P(tot): 63 W
R(thJC): 2 K/W
Logic level: NO
Mounting: SMD
Technology: CoolMOS E6
Fast bodydiode: NO
Automoción: NO
Encapsulado: DPAK
RoHS Status: RoHS-conform
Embalaje: REEL

Artículo fabricante: SP001117094
ECCN: EAR99
Número de tarifa aduanera: 85412900000
País: Malaysia
Clave-ABC: C
Plazo de entrega del proveedor: 17 Semanas

Descripción

CoolMOS™ E6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease-of-use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler.

Summary of Features

Easy control of switching behavior
Very high commutation ruggedness
Extremely low losses due to very low Figure of Merit (R DS(ON)*Q g) and E oss)
Easy to use
Better light load efficiency compared to C3
Outstanding reliability with proven CoolMOS™ quality combined with high body diode ruggedness
Better price performance in comparison to previous CoolMOS™ generations
More efficient, more compact, lighter and cooler