IPD65R660CFDAATMA1

La imagen puede diferir del original

Description: N-CH 650V 6A 660mOhm TO252-3 Fabricante: INFINEON Código de coincidencia (matchcode): IPD65R660CFDA Rutronik No.: TMOS1939 Unidad de embalaje: 2500 MOQ: 2500 Encapsulado: DPAK Presentación: REEL

Buscar alternativas

Hoja de datos Insertar en lista de proyectos Muestras

Download the free Library Loader to convert this file for your ECAD Tool

Parámetros

Configuration: N-CH
V(DS): 650 V
I(D)at Tc=25°C: 6 A
RDS(on)at 10V: 660 mOhm
Q(g): 20 nC
P(tot): 62,5 W
R(thJC): 2 K/W
Logic level: NO
Mounting: SMD
Fast bodydiode: YES
Automoción: NO
Encapsulado: DPAK
RoHS Status: RoHS-conform
Embalaje: REEL

Artículo fabricante: SP000928260
ECCN: EAR99
Número de tarifa aduanera: 85412900000
País: Malaysia
Clave-ABC: B
Plazo de entrega del proveedor: 19 Semanas

Descripción

650V CoolMOS™ CFDA is Infineon's second generation of market leading automotive qualified high voltage CoolMOS™ MOSFET. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the new CoolMOS™ CFDA series provides now also an integrated fast body diode.

Summary of Features

First 650V automotive qualified technology with integrated fast body diode on the market
Limited voltage overshoot during hard commutation – self limiting di/dt and dv/dt
Low gate charge value Q g
Low Q rr at repetitive commutation on body diode & lowQ oss
Reduced turn on and turn of delay times
Compliant to AEC Q101 standard