IPT60R080G7XTMA1

La imagen puede diferir del original

Description: N-CH 600V 29A 69mOhm HSOF-8 Fabricante: INFINEON Código de coincidencia (matchcode): IPT60R080G7 Rutronik No.: TMOS2614 Unidad de embalaje: 2000 MOQ: 2000 Encapsulado: HSOF-8 Presentación: REEL

Buscar alternativas

Hoja de datos Insertar en lista de proyectos Muestras

Download the free Library Loader to convert this file for your ECAD Tool

Parámetros

Configuration: N-CH
V(DS): 600 V
I(D)at Tc=25°C: 29 A
RDS(on)at 10V: 69 mOhm
Q(g): 42 nC
P(tot): 167 W
R(thJC): 0,75 K/W
Logic level: NO
Mounting: SMD
Technology: CoolMOS G7
Fast bodydiode: NO
Automoción: NO
Encapsulado: HSOF-8
RoHS Status: RoHS-conform
Embalaje: REEL

Artículo fabricante: SP001615904
ECCN: EAR99
Número de tarifa aduanera: 85412900000
País: Malaysia
Clave-ABC: A
Plazo de entrega del proveedor: 19 Semanas

Descripción

Description:

Summary of Features

Gives best-in-class FOM R DS(on)xE oss and R DS(on)xQ G
Enables best-in-class R DS(on) in smallest footprint

Benefits

Higher efficiency due to the improved C7 Gold technology and faster switching due to the package low parasitic source inductance and the 4pin Kelvin source concept
Improved power density due to low R DS(on) in small footprint, by either replacing TO-packages (height restrictions) or paralleling SMD packages due to thermal or R DS(on) requirements
Production cost reduction by moving to SMD through quicker assembly times