IDD08SG60CXTMA2
La imagen puede diferir del original
Description:
S-Diode 600V 8A 2.2V PG-TO252-3
Fabricante:
INFINEON
Código de coincidencia (matchcode):
IDD08SG60C
Rutronik No.:
DSKY5195
Unidad de embalaje:
2500
MOQ:
2500
Encapsulado:
DPAK
Presentación:
REEL
Buscar alternativas
Hoja de datos
Insertar en lista de proyectos
Muestras
Hoja de datos
Insertar en lista de proyectos
Muestras
Download the free Library Loader to convert this file for your ECAD Tool
- V(RRM)
- 600 V
- I(F)per diode
- 8 A
- I(FSM)
- 35 A
- V(F)
- 2.2 V
- Technology
- 3thinQ!SiC
- Automoción
- NO
- Encapsulado
- DPAK
- RoHS Status
- RoHS-conform
- Embalaje
- REEL
- Configuration
- SINGLE
- Mounting
- SMT
- T(j) max
- 175 °C
- Artículo fabricante
- SP001632510
- ECCN
- EAR99
- Número de tarifa aduanera
- 85411000000
- País
- Malaysia
- Clave-ABC
- A
- Plazo de entrega del proveedor
- 19 Semanas
The third generation of Infineon SiC Schottky diodes features the industry’s lowest device capacitance for any given current rating, which further enhances overall system efficiency, especially at higher switching frequencies and under low load conditions. The generation 3 is based on the same technology platform as generation 2 with the introduction, at package level, of the so called diffusion soldering.
Summary of Features
- Benchmark switching behavior
- No reverse recovery charge
- Temperature independent switching behavior
- High operating temperature (T j max 175°C)
Benefits
- System efficiency improvement compared to Si diodes
- Reduced cooling requirements
- Enabling higher frequency/increased power density
- Higher system reliability due to lower operating temperature
- Reduced EMI
Target Applications
- Server
- Telecom
- Solar
- Lighting
- PC power
- AC-DC
Puede pedir definitivamente los artículos de la cesta de compra o en caso que tenga alguna duda, enviar como consulta sin compromiso.
Rutronik24 es un portal de comercio electrónico solo para empresas y clientes corporativos
