IKW25N120H3FKSA1

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Description: IGBT 1200V 50A 2.40V TO247-3 Fabricante: INFINEON Código de coincidencia (matchcode): IKW25N120H3 Rutronik No.: IGBT1165 Unidad de embalaje: 30 MOQ: 30 Encapsulado: TO247-3 Presentación: TUBE

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Parámetros

V(CE): 1200 V
I(C): 50 A
V(CEsat): 2.40 V
Encapsulado: TO247-3
Bodydiode: YES
P(tot): 326 W
Automoción: NO
t(r): 41 nS
td(off): 277 nS
td(on): 27 nS
Montaje: THT
RoHS Status: RoHS-conform
Tecnología: HighSpeed
Embalaje: TUBE

Artículo fabricante: SP000674418
ECCN: EAR99
Número de tarifa aduanera: 85412900000
País: China
Clave-ABC: A
Plazo de entrega del proveedor: 21 Semanas

Descripción

1200 V IGBT with anti-parallel diode in TO-247 package

High speed 1200 V, 25 A hard-switching TRENCHSTOP™ IGBT4 co-packed with free-wheeling diode in a TO-247 package provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses.

Summary of Features
- Designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz
- Low switching losses for high efficiency
- Excellent Vce(sat) behavior thanks to the famous Infineon TRENCHSTOP™ technology
- Fast switching behavior with low EMI emissions
- Optimized diode for target applications, meaning further improvement in switching losses
- Low gate resistor selection possible (down to 5Ω) whilst maintaining excellent switching behaviour
- Short circuit capability 5µs
- Offering Tj(max) of 175°C
- Packaged with and without freewheeling diode for increased design freed

Benefits
- Low switching and conduction losses
- Very good EMI behavior
- Can be used with a small gate resistor for reduced delay time and voltage overshoot
- High current density
- Best-in-class 1200 V IGBT efficiency and EMI behavior

Potential Applications
- Industrial Heating and Welding
- Solutions for solar energy systems
- Uninterruptible power supply (UPS)