IKW50N65H5FKSA1

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Description: IGBT 650V 50A 1,65V TO247-3 Fabricante: INFINEON Código de coincidencia (matchcode): IKW50N65H5 Rutronik No.: IGBT2282 Unidad de embalaje: 30 MOQ: 30 Encapsulado: TO-247-3 Presentación: TUBE

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Parámetros

V(CE): 650 V
I(C): 50 A
V(CEsat): 1.65 V
Encapsulado: TO-247-3
Bodydiode: YES
P(tot): 16.7 W
Automoción: NO
t(r): 7 nS
td(off): 180 nS
td(on): 21 nS
Montaje: THT
RoHS Status: RoHS-conform
Tecnología: Trench
Embalaje: TUBE

Artículo fabricante: SP001001734
ECCN: EAR99
Número de tarifa aduanera: 85412900000
País: China
Clave-ABC: A
Plazo de entrega del proveedor: 21 Semanas

Descripción

Infineon’s new TRENCHSTOP™5 IGBT technology redefines “Best-in-class” IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the market’s high efficiency demands of tomorrow.

Summary of Features

650V breakthrough voltage
Compared to Infineon’s best-in-class HighSpeed 3 family
Factor 2.5 lower Q g
Factor 2 reduction in switching losses
200mV reduction in V CE(sat)
Co-packed with Infineon’s new Rapid Si-diode technology
Low C OES/E OSS
Mild positive temperature coefficient V CE(sat)
Temperature stability of V f

Benefits

Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability
50V increase in the bus voltage possible without compromising reliability
Higher power density design