IKW75N65RH5XKSA1

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Description: IGBT 650V 75A +SIC-DIODE TO-247 Fabricante: INFINEON Código de coincidencia (matchcode): IKW75N65RH5 Rutronik No.: IGBT2911 Unidad de embalaje: 30 MOQ: 240 Encapsulado: TO247-3 Presentación: TUBE

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Parámetros

V(CE): 650 V
I(C): 80 A
V(CEsat): 1.65 V
Encapsulado: TO247-3
Bodydiode: YES
P(tot): 395 W
Automoción: NO
t(r): 9 nS
td(off): 180 nS
td(on): 26 nS
Montaje: THT
RoHS Status: RoHS-conform
Tecnología: IGBT5
Embalaje: TUBE

Artículo fabricante: SP004038154
ECCN: EAR99
Número de tarifa aduanera: 85412900000
País: China
Clave-ABC: A
Plazo de entrega del proveedor: 22 Semanas

Descripción

650 V, 75 A IGBT Discrete with CoolSiC™ diode

650 V, 75 A TRENCHSTOP™ 5 H5 IGBT co-packed with half-rated 6th generation CoolSiC™ Schottky barrier diode in TO-247-3 package.

The ultra-fast 650 V hard-switching TRENCHSTOP™ 5 H5 IGBT benefits very low switching losses at switching speed above 30 kHz.

Combination of ultra-fast TRENCHSTOP™ 5 H5 IGBT with half-rated freewheeling SiC Schottky barrier diodes enables unprecedented reduction of total switching losses and allows to increase significantly switching frequency.

Summary of Features

Ultra-low switching losses due to the combination of TRENCHSTOP™ 5 and CoolSiC™ diode technology
Very low on-state losses
Benchmark switching efficiency in hard switching topologies
Qualified according to JEDEC for target applications
Pb-free lead plating; RoHS compliant
Qualified for industrial applications according to the relevant tests of JEDEC 47/20/22

Benefits